Abstract
This paper reports an analytical forward transit time and current gain model for SiGe-base HBT's. As confirmed by other published data, the generalized closed-form analytical model, which includes heavy-doping induced bandgap narrowing and concentration-dependent diffusion coefficients, provides a good prediction for the forward transit time/current gain for the HBT device with a uniform, linearly-graded, or triangular-shape germanium profile.
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