Abstract
A side-illuminated silicon X-ray strip detector for digital radiology with 100 μm pitch was designed, fabricated and characterized. In order to reduce noise and improve resolution of the detector, design and processing was optimized for low leakage currents, high dynamic resistance of biasing resistors, reduced strip pitch and wafer thickness. Operation of the field oxide field effect transistor (FOXFET) structure was analyzed by a 2D numerical device simulator and compared to experimental results. Measured results reveal that the detector is suitable for application in X-ray detection systems.
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