Abstract
The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness on the performance of graphene devices, three common substrate materials (SiO2, BN and mica) are examined. Rough surfaces are generated by means of a Gaussian auto-correlation function. Electronic transport simulations are performed in the framework of tight-binding Hamiltonian and non-equilibrium Green's function (NEGF) formalisms. The results show that with an appropriate selection of the substrate material, the proposed devices can meet the on/off-current ratio required for future digital electronics.
Highlights
Field effect transistors (FETs) with a 10 nm gate length are stipulated by the International Technology Roadmap for Semiconductors (ITRS) for the year 2020 [1]
In order to incorporate the effect of the surface roughness (SR) into the tight-binding Hamiltonian, the graphene nanoribbons (GNRs) lattice is mapped on the C(r) surface and the heights of carbon atoms are modulated
The observed decrease in the on-current is due to larger SR scattering rate on rougher surfaces while the off-current increases due to the SR-induced decrease in the transport gap, both stated above
Summary
Field effect transistors (FETs) with a 10 nm gate length are stipulated by the International Technology Roadmap for Semiconductors (ITRS) for the year 2020 [1]. In this work the device performance of symmetrically BN-doped zigzag graphene nanoribbon field effect transistors (s-BN-ZGNRFETs) is numerically studied for the first time.
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