Abstract
AbstractAlGaN/GaN heterostructures were grown on sapphire and alternatively on silicon substrates covered with a thin SiC layer by MOCVD. The side gated transistors were fabricated using electron beam lithography. The conductivity of the drainâsource branch could be tuned via the side gate formed by a twoâdimensional electron gas directly connected to the source drain branch or separated by a trench.The electrical measurements of the fabricated inâplaneâgated devices revealed unipolar transistor behavior for both types of substrates. The transconductance was 1 ”A/V and the output conductance reached 1.9 ”A/V for the side gate transisitor on sapphire. The transconductance and output conductance of the side gate device on silicon substrates were 6 and 18 ”A/V, respectively. (© 2014 WILEYâVCH Verlag GmbH & Co. KGaA, Weinheim)
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