SiC pore surfaces: Surface studies of 4H–SiC(11¯02) and 4H–SiC(1¯102¯)

Abstract

The morphology and atomic structure of 4H–SiC(11¯02) and 4H–SiC(1¯102¯) surfaces, i.e., the surfaces found in the triangular channels of porous 4H–SiC, have been investigated using atomic force microscopy, low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES). After hydrogen etching, the surfaces show steps parallel and perpendicular to the c axis, yet drastically different morphologies for the two isomorphic orientations. Both surfaces immediately display a sharp LEED pattern. Together with the presence of oxygen in the AES spectra, this indicates the development of an ordered oxide. Both surfaces show an oxygen-free well-ordered surface after Si deposition and annealing.