Abstract
AbstractSiC crystal growth in transition metal silicide melts was investigated by using spontaneous infiltration and solution methods. In the infiltration experiments, SiC powder preforms were infiltrated with FexSiy (Fe3Si, Fe5Si3 and FeSi) and CoSi melts. The dissolution and precipitation of SiC led to SiC crystals growth in the infiltrated Fe5Si3 and CoSi melts, SiC particles coalescing in FeSi and free carbon precipitation in Fe3Si. In the solution experiments, carbon from the graphite crucible dissolved in and reacted with FeSi2 and Ti2.3Si7.7 to form SiC crystals. Scanning electron microscopy (SEM), X‐ray diffraction (XRD) and Raman scattering spectrometer were employed to investigate SiC crystals growth. Based on the investigation, the effect of solution content on the SiC crystal growth, the growth mechanisms in both methods and prototypes of the SiC crystals are also discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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