Abstract
Thermal Plasma Chemical Vapor Deposition (TP-CVD), a recent synthesis and deposition process applied for the synthesis and deposition of Si3N4 fibers, is presented. Liquid disilane precursors, by-products from the silicone industry, are employed as reactant. Nitrogen is introduced as external nitriding agent in the form of plasma gas. The microstructure as well as phase content α or β-Si3N4 can be controlled. The Figure shows an SEM picture of a Si3N4 coating.
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