Abstract
We present a novel laser-assisted chemical vapor deposition (LACVD) system for growing Si nanocrystals embedded in a Si suboxide matrix at room temperature. Varying growth gas ratio caused the observed photoluminescence (PL) light emission to vary from 1.65 eV to 1.92 eV without post-annealing. A phase-separated model and PL measurements were used to identify Si nanocrystals embedded in Si suboxides.
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