Abstract
Ge stripes grown by rapid melt growth (RMG) have produced defect free single crystals with excellent device characteristics. However, in some cases significant Si concentrations have been observed in the stripes, far from the seed region. In this paper, we anneal Ge RMG stripes at temperatures ranging from 950 °C to 1150 °C for different time periods and show that the measured composition profiles match a model in which complete mixing in the melt is assumed. The model also assumes that the average Si concentration in the RMG stripe equals the equilibrium liquidus concentration at the annealing temperature. This paper outlines a method to predict the profile of Si absorbed from the seed region during RMG. The conclusions from this paper have important implications for minimizing Si contamination in RMG grown stripes.
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