Strain Evolution of Ge on Insulator Formed by Rapid Melting Growth

Abstract

Lateral growth of Ge on insulator was obtained at various annealing temperature by rapid melting growth. The strain distribution of Ge strip was measured with/without SiO2 micro-crucible by micro-Raman. Strain compensating in the Ge stripe between thermal tensile strain and compressive strain were observed. The compressive strain was attributed to the Si-Ge lattice mismatch along the Ge strip. When the Si concentration gradient was lower than ∼3.5%, almost fully-strained Ge strip was obtained. When the Si concentration gradient was larger than ∼3.5%, strain relaxation was observed. The highest average residual compressive strain was about 0.24% in growth region.