Si-Ge solid solution single crystal growth by electron beam floating zone technique

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A new method is suggested to grow single crystals of Si-Ge solid solutions. Growth has been carried out by zone melting of Si-Ge ingots of varying composition, with Si single crystals used as seeds. It has been shown that the growing crystals lose their single-crystalline nature owing to constitutional supercooling. Decrease in Ge concentration in the initial ingot or in diameter results in increase of the Ge concentration limit in Si-Ge single crystals up to 50 at%. Solid solution single crystals containing more Ge can be obtained if they are grown in the direction opposite to that of gravitation.