Abstract
The problem of component distribution in solid solution crystals grown from a melt fed by rods made of the components of the system, with allowance for the dependence of their segregation coefficients on the melt composition, has been solved in the Pfann approximation. Examples determining the conditions for growing homogeneous single crystals of solid solutions with a specified composition and obtaining (in a unified cycle) crystals composed of several uniform parts of different compositions are presented for the Si-Ge system. The good prospects of using the method of double feeding the melt for growing single crystals of semiconductor solid solutions with specified graded and/or uniform compositions are shown.
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