Abstract
A new type of superlattice, semiconductor-atomic superlattice (SAS), is discussed. Specifically, a superlattice with multiple periods of Si/O shows green electroluminescence. Oxygen is introduced via absorption followed by thin Si deposition, usually between 1 and 2 nm thick. The MBE deposited structure shows epitaxy. The electroluminescence diode (ELD) has been life-tested for more than one year without degradation. High resolution TEM shows that defect density at the Si/O interface is below 109 cm–2. A preliminary calculation shows that the Si/O complex results in a barrier height of 0.9 eV for silicon. The door is opened for device applications in silicon optoelectronics.
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