Shottky Barrier Diodes on AlN Free-Standing Substrates

Abstract

Lateral Schottky rectifiers were fabricated on bulk single-crystal free-standing AlN substrates. The unintentionally doped substrates display n-type conductivity. The diode shows a low reverse leakage current of ∼0.1 nA at -40 V at room temperature. The ideality factor for forward characteristics is 11.7 at room temperature and shows temperature dependence, suggesting the lateral nonuniformities at the metal/semiconductor interface. The fabricated devices are stably operated even at 573 K, owing to the wide band gap (6.2 eV) of AlN. The reverse leakage current of the device is explained by either a trap-assisted tunneling process or one-dimensional variable-range-hopping conduction along the dislocations.