Abstract
In this work, the noise characteristics of InGaAs planar diodes are studied. The presence of a recessed region originates a barrier in the potential profile, which can modulate the passage of ballistic carriers along the structure. This effect, in turn, may lead to suppressed levels of noise with respect to the full Poissonian value due to Coulomb interaction. With the aim of evidencing such phenomenon, the noise properties of a set of devices with different dimensions have been measured at room temperature. Some evidence of potential shot-noise suppression is observed in the results, but the undesired effect of resistive contacts and accesses has been found to be a limiting factor to quantify the suppression accurately.
Published Version
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