Comparative Analysis of Sequential and Coherent tunneling Models of Shot Noise in Resonant Diodes

Abstract

We compare the sequential and coherent tunneling models for current voltage characteristic and shot noise suppression in symmetric double barrier resonant diodes. Results confirm that the I‐V characteristic remains the same for the two models, while at increasing voltage the shot noise power shows significant differences. In the sequential tunneling, shot noise exhibits in general two regions of suppressions with the associated Fano factor never dropping below the value of 0.5. By contrast, in the coherent tunneling shot noise exhibits a single region of suppression with the associated Fano factor having the possibility of dropping below the value of 0.5. We conclude that shot noise suppression below 0.5 of the full shot noise value can be a signature of coherent versus sequential transport model.