Abstract
The authors report on the improved microwave performance of short AlGaN/GaN doped channel heterostructure field effect transistors. These transistors with 0.25 µm gates have a cutoff frequency fT up to 36.1 GHz (the highest reported value for a wide-bandgap semiconductor) and a maximum oscillation frequency fmax ≃ 70.8 GHz. This value of fT is the highest value reported for any wide-bandgap semiconductor device.
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