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Abstract
This paper investigates short-channel effects (SCEs) in double-gate tunnel FETs (TFETs) using an analytic model that includes depletion in the source. It is shown that the drain bias has a significant effect on the potential profile at the source when the channel length is reduced to below twice the scale length. The OFF-state current becomes a strong function of channel length. The subthreshold current slope is also degraded in short-channel TFETs to the extent that there is no region of <;60 mV/decade below a minimum channel length. The SCE also manifests itself in the finite-output conductance in the saturation region-a Drain-Induced Barrier Lowering-like effect in conventional MOSFETs.
Published Version
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