Abstract
Cathodoluminescence investigations on bulk undoped semi-insulating GaAs (SI GaAs) samples taken from different sources reveal the presence of a sharp, long wavelength emission at 0.9 eV (at 10 K), with a very narrow full-width at half-maximum of 7 meV, which shows a redshift and thermal broadening upon increasing the temperature. At 10 K, the liquid encapsulated Czokralski grown undoped SI GaAs samples show an additional lower energy emission at 0.89 eV, which is absent in the vertical gradient freeze grown undoped SI GaAs samples. Systematic temperature dependent and beam parameter dependent studies indicate that, the probable origin for the 0.9 eV emission maybe some quantum-dot/nano-cluster like structures present inside the SI GaAs crystal lattice.
Published Version
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