Abstract
Diffusion of Si in GaAs is studied using implanted Si in undoped GaAs, implanted Si in Se-, Si-, and Zn-doped GaAs, and grown-in Si in epitaxial layer structures. No diffusion is observed in the undoped and Zn-doped GaAs cases, a moderate level is observed in the Si-doped case, and a significant amount is found for the Se-doped and nonimplanted Si-doped epitaxy cases. These results indicate that the diffusion is controlled by a Fermi level mechanism (probably via ionized gallium vacancies) and that implant damage inhibits diffusion by keeping the electron concentration and/or the ionized gallium vacancy concentration low.
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