Abstract
GaInAsP/InP single quantum well (SQW) structures have been grown using low pressure metalorganic vapour phase epitaxy (MOVPE), with growth interruptions used both before and after the quanternary layer growth. The 4 K photoluminescence (PL) spectra for a 10 Å thick well exhibited a peak splitting, with PL linewidths of 16 and 20 meV, representing the narrowest ever reported in MOVPE grown GaInAsP/InP SQWs of this thickness. This peak splitting was attributed to well thickness fluctuations of one monolayer, with extended monolayer terraces at the heterointerfaces, the first report of this phenomenon for GaInAsP/InP heterointerfaces. From the effect of variation of the interruption times on the linewidths and splitting of these PL peaks, we conclude that growth interruption of 20 s is sufficient for surface migration to flatten such an interface.
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