Abstract
GaAs/GaAs 1− x P x single quantum well (QW) structures which involve strained-barrier or strained-barrier or strained-well layers, have successfully grown by low pressure metal-organic vapor phase epitaxy (MOVPE) on GaAs or GaAs t− y P y substrates. Owing to the extremely strong and highly resolved excitonic transitions of electron to heavy hole and electron to light hole, which are observed in photoluminescence and reflectance spectra, the conduction- and the strain-split valence-band-edge lineups have been determined. Furthermore, we demonstrate for the first time that the band-edge lineups are strongly dependent not only on the configuration of the elastic strain in the quantum well structure but also on the value of the elastic strain or the phosphorus composition.
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