Abstract
The thermal properties of a phase-change random access memory (PCRAM) cell are dominated by the phase-change recording material. The SET/RESET resistances, the minimum width of the SET/RESET pulse, the threshold voltage and the maximum temperature of PCRAM cells are impacted by the thickness of the phase-change layer. In this paper, a PCRAM cell with different Ge–Sb–Te phase-change layer thickness are fabricated, and the electrical properties of the PCRAM cells are tested. The SET/RESET properties dependence of PCRAM cells on the thickness of the phase-change layer is investigated and compared for the low-power consumption of PCRAM.
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