Abstract
In this paper we have shown a construction of an active sensitive element of irradiation sensor. This sensor is based on metal-insulator-semiconductor structures (MIS structures). In this work we have researched an influence of α-particles to the MIS structures, which were in the mode of the constant current maintaining. This mode is characterized by the high-field Fowler-Nordheim injection. We have shown that ionization processes occurring in dielectric films of MIS structures, which are in the mode of charging and discharging of capacitance and also in the mode of high-field tunnel injection of electrons by pulse of constant current, could be used in order to register the irradiation. We have found out advantages and disadvantages of utilization of MIS sensors to register charged particles. We also have advised how to use these layers.
Published Version
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