Abstract
In this work we have developed an experimental automatized setup based on PXI platform and LabVIEW by National Instruments to investigate parameters of thin dielectric films of MIS structures. The setup allows to implement the method of high-field tunnel injection of charge carriers under the stress and measurement modes. For the method the main injection of charge into gate dielectric is realized under stress modes at which either voltage, applied to the gate, or current, flowing through the dielectric, is held constant. In order to obtain additional information about changing of charge state of MIS structure one should analyze not only time dependencies of currents and voltages during the stress conditions but, besides, a change of current-voltage characteristics of MIS structure which are acquired before and after injection at measurement level of currents and voltages that are significantly lower than stress levels. As a result, charge effects, which can be observed in MIS structure at the time of stress mode setting, become available to be researched. Besides, that makes possible to take into account an influence of the charge effects to a change of the charge state of gate dielectric under high-field injection of charge carriers.
Published Version
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