Abstract
This paper reports the sensitivity analysis of double gate TFET using the Transition Metal Di chalcogenide (TMD) material in photo sensitive region with the help of technology computer aided design (TCAD) simulator tool. The sensitivity analysis elaborates the significance of TMD material for optical applications. The photo sensitivity analysis is exhibited for the variation in wavelength (λ) of incident light under the visible range of spectrum. Furthermore, we have executed the performance of photo sensor by varying the position of illumination window. Result reveals that sensitivity, responsivity, and quantum efficiency of sensor are improved at λ = 320 nm. The maximum value of signal to noise ratio (SNR) and responsivity (R) are 63.2 dB and 106, respectively, under the visible range. This TMD material based TFET photo-sensor will be useful for the next generation low power highly sensitive optical devices.
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