Abstract

Recently Transition Metal Dichalcogenide (TMDC) materials have been explored as channel material for enhanced performance of electronic devices. In this study, the variations of electrostatics and transport characteristics of a triple material double gate metal-oxide-field effect transistor (MOSFET) with TMDC channel materials have been investigated through numerical simulator. The simulator is designed based on self-consistent solution of 1D Poisson-Schrodinger equation along the direction perpendicular to the channel and transport characteristics are observed employing Non-equilibrium Greens Function (NEGF) formalism. The proposed device structure shows improvement in Drain Induced Barrier Lowering (DIBL). The impacts of different TMDC materials on electrical characteristics like energy sub band profile, current-voltage relationship, ON/OFF current ratio have been investigated. Such study would be beneficial for next generation electronic device applications.

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