Abstract
An outline is given of recent developments in X-ray semiconductor detectors. With current techniques, detectors having areas of 25–50 mm 2 and a few millimeters thick can be fabricated to give resolutions better than 200 eV. After a brief description of the basic mechanism of semiconductor counter operation a comparison is made between semiconductor counters and gas filled proportional devices. Detector fabrication and cryostat design is discussed in detail. The effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, etc. are discussed and steps taken to reduce microphony demonstrated. The main applications of these detectors in X-ray fluorescence analysis, electron microprobe analysis, and scanning electron microscopy are reviewed.
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