Abstract
Influence of the semiconductor film thickness in the double-gate silicon on-insulator (SOI) MOSFET on the electron concentration distribution, electron charge density, threshold voltage, electron effective mobility, and drain current is theoretically analyzed. The consideration of the semiconductor region is based on two descriptions: the "classical" model based on a solution to the Poisson equation and the "quantum" model based on a self-consistent solution to the Schrodinger and Poisson equation system. The electron effective mobility and the drain current are calculated with the use of the local mobility model.
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