Abstract

A model for interpreting the experimental observations of forward current-voltage characteristics of anisotype semiconductor heterojunctions is proposed. In this model the interface states determine the carrier transport mechanism. Under forward bias, electrons tunnel from the conduction band of semiconductor 1 to an interface state. Then electrons are transported from one interface state to the other. Finally electrons tunnel from the interface states area to the conduction band of semiconductor 2. The transmission coefficient of the double non-symmetrical barrier, formed at the heterojunction interface, was obtained by the WKB approximation. The form of the interface states distribution, in terms of both energy and distance, was estimated. The model can be applied to a large number of anisotype heterojunctions. The application of the model results in useful information about the formation and behaviour of the heterojunction interface.

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