Abstract
AbstractIn this study, the forward and reverse bias current‐voltage (I‐V), capacitance‐voltage (C‐V) and conductance‐voltage (G/w‐V) characteristics of AlTiWPd2Si/nSi structures were measured at room temperature. In order to see the illumination effect on main structure parameters such as zero‐bias‐barrier height (ΦBo), ideality factor (n), series resistance (Rs) of structure and interface states (Nss), the forward and reverse bias I‐V, C‐V and G/w‐V characteristics of AlTiWPd2Si/nSi structures were investigated in the dark and under various levels of illumination. These main electrical parameters were obtained as function of illumination levels from these measurements. Experimental results show that both the C and G values increase with increasing illumination level due to the illumination‐induced interface states. Also, the value of Rs decreases with increasing illumination level. The Nss profile was obtained for both forward bias I‐V characteristics by taking into account the bias dependent of the ideality factor and effective barrier height (Φe) and low‐high frequency method. Copyright © 2010 John Wiley & Sons, Ltd.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
