Abstract
We report the first microwave characterization of an In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As heterojunction bipolar transistor (HBT) with a buried InGaAs subcollector grown by selective epitaxy. The study compares two HBT's having identical 2/spl times/10 /spl mu/m/sup 2/ self-aligned emitter fingers but different subcollectors. Improvement in microwave performance of the selectively-grown HBT over the conventional HBT was observed due to the reduced parasitic base-collector capacitance achieved by incorporating the selectively-grown buried subcollector. >
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