Abstract
Self-stopping, selective oxidation of AlAs was demonstrated. Lateral oxidation was stopped where the thickness of AlAs was decreased from 30 to 15 nm because of the large stress arising from the layer boundary of the oxidized AlAs and the surrounding GaAs. The thickness could be varied without degrading the wafer quality by in situ selective growth using the masked molecular beam epitaxy method, which will be available to make oxidized vertical cavity surface emitting lasers uniformly and repeatedly.
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