Abstract
Capacitance voltage (C–V) technique is used to determine the kinetics of lateral oxidation of AlxGa1−xAs layer in a circular mesa structure. The oxide layer width determined by the C–V technique agrees with optical measurements. Additionally, the C–V technique has the advantage of determining different types of defects in the oxide, which are important for projecting the reliability of vertical cavity surface emitting laser devices. The wet oxidation between 400 and 435 °C shows negative charges in the oxide.
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