Abstract
In this work, a type-III heterojunction based on a pulsed-laser-deposited vanadium dioxide (VO2) and p-type silicon (p-Si) substrate is realized. The device shows a large self-powered and room-temperature photoresponse to IR (950 nm), green (515 nm) and blue (456 nm) LEDs. A short-circuit current (I sc) of ∼3 µA and an open-circuit voltage (V oc) of ∼−120 mV are observed under IR LED illumination. The work function data in literature along with the sign of V oc measurement is used to sketch the energy band diagram of the heterojunction. The temperature-dependent I sc properties of the junction, contrary to conventional photodetectors, show an initial rise and then a sharp transition from maximum (3.5 μA) to almost zero near 337 K, corresponding to a metal–insulator phase transition, paving the way for photodetectors with temperature-tunable photoresponsivity.
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