Abstract
Key requirements for the fabrication of semiconductor quantum dots (QD) are their size, size distribution and density. Beyond conventional lithography methods self-organization processes are promising for the realization of QDs. We present a new route for the generation of quantum dots, which in contrast to epitaxial growth is a subtractive self-organized and self-ordered method. It is based on a surface instability induced by low energy and normal incidence ion bombardment of semiconductor surfaces. Uniform crystalline islands with dimensions as small as 15 nm and densities up to 10 11 cm −2 are formed by a cooperative process on the surface of semiconductors during continuous ion sputtering.
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