Abstract
The development of the self‐organized growth of pentacence thin films on the channel region of a thin‐film transistor (TFT) using surface modifications induced by organic vapor phase deposition is reported (see Figure). A bottom‐contact TFT on plastic using an organic gate insulator of cross‐linked poly‐(4‐vinylphenol) exhibited a field‐effect mobility of 1.2 cm2/Vs and an on/off current ratio of ∼ 107.
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