Abstract
In this letter, we report on the growth of thin films of N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13H27) by organic vapor phase deposition (OVPD). Uniform films are deposited with a material utilization efficiency of 59±4% and deposition rates up to 15Å∕s. Top-contact transistors based on OVPD-grown PTCDI-C13H27 show high n-type mobilities (up to 0.3cm2∕Vs) and reproducible characteristics. The influence of deposition parameters on electrical properties is discussed.
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