Self‐organized InAs quantum dots grown in a V‐groove InGaAs quantum wire

Abstract

AbstractSelf‐organized InAs quantum dots (QDs), by the Stranski–Krastanow mode, have been grown by using low‐pressure metalorganic chemical vapor deposition on V‐groove GaAs substrates. By adjusting the flow rate of AsH3 during the growth of InAs QDs, a one dimensional InAs QD array was successfully formed along the [0$ \bar 1 $1] direction only at the bottom of V‐grooves. No QDs were observed on the sidewalls and the surface of the mesa top. The InAs QDs took on an oval shape. They were spatially well‐isolated along the [0$ \bar 1 $1] direction with a line density of 3 × 103 cm–1. These low‐density InAs QDs are expected to be used in areas of quantum information and quantum computing. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)