Abstract
A preparation method for octadecyltrimethoxysilane (ODS) self‐assembled monolayers (SAMs) that enables the selective‐area ALD of iridium is studied using an ALD process for iridium at 225 °C. ODS SAMs were prepared from the gas phase by two preparation methods: either with exposure to ODS only, or with alternate exposures to ODS and water. SAMs were patterned with a lift‐off process using aluminium as a mask layer.
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