Abstract
Self-assembled InGaN islands were grown by molecular-beam epitaxy on GaN, following a Stranski–Krastanow growth mode. Atomic force microscopy revealed that their dimensions were small enough to expect zero-dimensional quantum effects: the islands were typically 27 nm wide and 2.9 nm high. Strong blue-violet photoluminescence of the dots is observed, persisting up to room temperature. The temperature dependence of the photoluminescence is analyzed and compared to that of InGaN quantum well and bulk samples.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
