Growth of stacked GaSb/GaAs self-assembled quantum dots by molecular beam epitaxy

Abstract

A stacked structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown by molecular beam epitaxy in the Stranski–Krastanow growth mode. The stacked structure consists of alternate layers of GaAs, 10 nm thick, and GaSb QDs. The QDs, with nanometer-scale dimensions, were characterized by atomic force microscopy. Furthermore, we observed clearly separated photoluminescence peaks from the QDs and the wetting layer. This result indicates that the growth of the GaSb/GaAs heterostructure is well controlled despite the deposition of a few monolayers.