Self-assembled InAs and In 0.9Al 0.1As quantum dots on (0 0 1)InP substrates grown by molecular beam epitaxy (MBE)

Abstract

InAs and In 0.9Al 0.1As self-assembled quantum dots have been grown by Stranski–Krastanow growth mode on In 0.52Al 0.48As lattice-matched on (0 0 1)InP substrates by MBE. The ternary In 0.9Al 0.1As dots on InP was demonstrated for the first time. The structural and optical properties were characterized using TEM and PL, respectively. Experimental results show that, a larger critical thickness is required for In 0.9Al 0.1As dots formation than for InAs dots, the In 0.9Al 0.1As dots show larger sizes and less homogeneity; some ordering in alignment can be observed in both InAs and In 0.9Al 0.1As dots, and In 0.9Al 0.1As dots give narrower luminescence than InAs dots.