Abstract
MnP nanowires have been grown by molecular beam epitaxy (MBE) without any preliminary deposited metal catalyst on InP(100) and GaAs(111)B substrates. Mn was supplied using a conventional Knudsen cell, whereas P2 was supplied as a gas by the decomposition of tertiary butylphosphine (TBP) using a cracking cell. The self-assembled growth of nanowires was observed when the substrate temperature exceeded 430 °C. Nanowires obtained on the InP(100) surface had diameters close to 150 nm, lengths of up to 2 µm, whereas nanowires grown on the GaAs(111)B surface had widths of up to 600 nm, lengths of up to 30 µm, and clear atomic facets. Magnetic and optical characterizations were also carried out.
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