Self-assembled GaAs antidots growth in InAs matrix on [formula omitted] InAs substrate

Abstract

We have grown GaAs antidots in InAs matrix on (100) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5ML. For 2.5ML GaAs deposition, the grown antidots have a size of about 15–35nm in base diameter and about 2–4nm in height with a density about 3–4×1010cm−2.