Self-assembled GaAs antidots growth in InAs matrix on (100) InAs substrate

Abstract

Abstract We have grown GaAs antidots in InAs matrix on (1 0 0) InAs substrate successfully. The quantum-sized 3-D islands were observed clearly in both AFM and TEM measurements. From these observations, the 2-D to 3-D transition thickness is determined to be between 2.25 and 2.5 ML . For 2.5 ML GaAs deposition, the grown antidots have a size of about 15– 35 nm in base diameter and about 2– 4 nm in height with a density about 3– 4×10 10 cm −2 .