Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix

Abstract

The heterostructures with self-assembled InSb quantum dots (QDs) with density (up to 1010cm−2) were obtained on the InAs-rich (100)-oriented surface by combining technology including liquid phase epitaxy and metalorganic vapor phase epitaxy. Using of the multicomponent In–As–Sb–P solid solutions lattice-matched with InAs substrate as matrix layers allows changing the surface chemistry of a matrix material. High-resolution cross-section images of the coherent InSb QDs buried into the InAs(Sb,P) matrix were obtained by transmission electron microscopy. It was experimentally demonstrated that self-assembled InSb QDs can be formed on InAs-rich surface in Stranski–Krastanow mode. The optimal thickness of the wetting layer was dependent on matrix surface chemistry: 2nm-thick for the binary InAs surface and 1.3nm-thick for the quaternary InAsSbP one were found.