Self-aligned normally off GaAs MESFET using Sn-doped SiO2 glass

Abstract

An improved normally-off GaAs MESFET was fabricated by employing Sn-doped SiO2 glass, which was used as an Sn-diffusant for making the N+ layer. An N+ layer with Rs=100$/□ and Ns=3×1013 cm−2 was successfully obtained under 800°C, 20 min diffusion conditions. A new self-alignment technique, using doped-SiO2 film, provided a high performance normally-off GaAs FET.