Abstract
A novel self-alignment technique, the asymmetric implantation self-alignment technique (ASIST), has been developed for GaAs MESFETs. This technique is based on the selective self-alignment ion implantation which provides an asymmetric n+ profile for the source and drain regions. By ASIST, the GaAs MESFET has been fabricated with the heavily doped source and the lightly doped drain and it is demonstrated for the first time that this structure is quite effective in suppressing the short-channel effect without increasing the source resistance. In this letter, the process and device characteristics of the ASIST-FET are described.
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