Abstract
Knowledge of the difference between the drain and source resistances ( R d - R s) of MOSFETs provides useful information on how the performance of MOSFETs will vary if the drain and source regions are interchanged. Device simulations are carried out to study the physical mechanisms underlying ( R d - R s) in MOSFETs. The present results show that ( R d - R s) is mainly due to the difference in the drain and source contact resistances, not to the difference in the source and drain doping densities, nor to misalignment of the gate with respect to the source and drain regions.
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